PART |
Description |
Maker |
TLN20107 TLN201F TLN201 |
Infrared LED GaA?As Infrared Emitter Infrared LED GaA??s Infrared Emitter Infrared LED GaAГAs Infrared Emitter
|
Toshiba Semiconductor
|
SIR-563ST3F07 |
Infrared light emitting diode, top view type 5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Rohm
|
ASDL-4770-C22 ASDL-4770-C41 |
1 ELEMENT, INFRARED LED, 940 nm High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
AVAGO TECHNOLOGIES LIMITED http://
|
ASDL-4772-C41 ASDL-4772-C22 |
1.6 mm, 1 ELEMENT, INFRARED LED, 940 nm High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
Lite-On Technology, Corp. AVAGO TECHNOLOGIES LIMITED
|
TLP831 |
PHOTO-INTERRUPTER INFRARED LED PHOTOTRANSISTOR PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
Toshiba Semiconductor
|
TLN110 |
INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
VSMF9700-GS18 VSMF9700-GS08 |
High Speed Infrared Emitting Diode, 890 nm 2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
Vishay Siliconix VISHAY SEMICONDUCTORS
|
SIR91-21C |
.9mm Round Subminiature “Z-BendLead Infrared LED 0.9毫米回合微型的“Z -弯”铅红外发光二极 .9mm Round Subminiature “Z-Bend” Lead Infrared LED .9mm Round Subminiature “Z-Bend Lead Infrared LED
|
Everlight Electronic Co., Ltd. Everlight Electronics Co., Ltd
|
BIR-BO13E4G-2 BIR-BO13V4V-2 BIR-BN03V4V-2 BIR-BO03 |
5 mm, 1 ELEMENT, INFRARED LED, 850 nm 4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm 4.98 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp. AMERICAN BRIGHT OPTOELECTRONICS CORP
|
FRS5XX |
850nm & 940nm Infrared LED Module Each LED watts: 0.06W
|
OptoSupply International
|